Fairchild Semiconductor fdr4410 free download

File name fdr4410.pdf

April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost 9.3 A, 30 V. RDS(ON) = 0.013 @ VGS = 10 V alternative to the popular Si4410DY. RDS(ON) = 0.020 @ VGS = 4.5 V. The SuperSOTTM-8 package is 40% smaller than the SO-8 High density cell design for extremely low RDS(ON). package. Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. The SuperSOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S 5 4 D D S 6 3 10 44 7 2 G D D 8 1 TM pin 1 D SuperSOT -8 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter FDR4410 Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage